Microelectronics & VLSI Design

https://sites.google.com/site/drraghunandanswain/ 

9438801526

6 year 

Basic Electronics, Analog Electronics Circuit, Digital Electronic Circuit, Switching Circuits and Logic design, Semiconductor Devices, MEMS, Digital VLSI Design, Radar and TV Engineering, Audio Video Engineering, Electronic Device Modelling, System Design using Integrated Circuit, Electronic Design and Automation, Embedded Systems.

Journal Publication
1. A. Chakrabarty, R. Swain, “Modelling of fin width dependent threshold voltage in fin shaped nano channel AlGaN/GaN HEMT”, Superlattices and Microstructures, vol. 141, p. 106497, 2020. [IF: 2.12, SCI, JCR]. DOI: 10.1016/j.spmi.2020.106497.
2. G. Amarnath, R. Swain, and T. R. Lenka, “Modeling and simulation of 2DEG density and intrinsic capacitances in AlInN/GaN MOSHEMT”, International Journal of Numerical Modeling, vol. 31, no. 1, pp. 1-8, 2018. [IF: 0.833, SCI, JCR]. DOI: 10.1002/jnm.2268.
3. B. Shougaijam, R. Swain, C. Ngangbam, T. R. Lenka, “Analysis of morphological, structural and electrical properties of annealed TiO2 nanowires deposited by GLAD technique,” Journal of Semiconductors, vol. 38, no. 5, pp. 053001, 2017. [IF: 1.18, Scopus]. DOI: 10.1088/1674-4926/38/5/053001.
4. R. Swain, K. Jena and T. R. Lenka, “Modeling of Capacitance and Threshold Voltage for ultra- thin normally-off AlGaN/GaN MOSHEMT,” Pramana-Journal of Physics, vol. 88, no. 1, pp. 1-7, 2017. [IF: 0.720, SCI, JCR]. DOI. 10.1007/s12043-016-1310-y.
5. K. Jena, R. Swain, and T. R. Lenka, “Physics-Based Mathematical Model of 2DEG Sheet Charge Density and DC Characteristics of AlInN/AlN/GaN MOSHEMT”, Int. Journal of Numerical Modeling, vol. 30, no. 1, pp. 1-11, 2017, [IF: 0.795, SCI, JCR]. DOI: 10.1002/jnm.2117.
6. R. Swain, K. Jena and T. R. Lenka, “Oxide interfacial charge engineering towards normally-off AlN/GaN MOSHEMT”, Material Science in Semiconductor Processing, vol. 53, pp. 66-71, 2016. [IF: 2.722, SCIE, JCR]. DOI: 10.1016/ j.mssp.2016.06.008.

7. R. Swain, K. Jena and T. R. Lenka, “Modeling of Forward Gate Leakage Current in MOSHEMT using Trap Assisted Tunneling and Poole-Frenkel Emission”, IEEE Transactions on Electron Devices, vol. 63, no. 6, pp. 2346-2352, 2016. [IF: 2.704, SCI, JCR]. DOI: 10.1109/TED.2016.2555851.
8. K. Jena, R. Swain, and T. R. Lenka, “Effect of thin gate dielectrics on DC, RF and Linearity characteristics of Lattice-Matched AlInN/AlN/GaN MOSHEMT”, IET Circuits, Devices & Systems, vol 10, no. 5, pp. 423-432, 2016. [IF: 0.521, SCI, JCR]. DOI: 10.1049/iet-cds.2015.0332.
9. B. Shougaijam, R. Swain, C. Ngangbam, T. R. Lenka, “Enhanced Photodetection by Glancing Angle Deposited Vertically Aligned TiO2 Nanowires,” IEEE Transaction on Nanotechnology, vol. 15, no. 3, pp. 389-394, 2016. [IF: 1.825, SCI, JCR]. DOI: 0.1109/NANO.2016. 2536162.
10. R. Swain, K. Jena and T. R. Lenka, “Model Development for I-V and Transconductance Characteristics of Normally-off AlN/GaN MOSHEMT”, Semiconductors, vol. 50, no. 3, pp. 384-389, 2016. [IF: 0.739, SCI, JCR]. DOI: 10.1134/S1063782616030210.
11. K. Jena, R. Swain, and T. R. Lenka, “Impact of AlN Spacer on Analog Performance of Lattice-Matched AlInN/AlN/GaN MOSHEMT”, Journal of Electronic Materials, vol. 45, no. 4, pp. 2172-2177, 2016. [IF: 1.798, SCI, JCR]. DOI: 10.1007/s11664-015-4296-1.
12. K. Jena, R. Swain, and T. R. Lenka, “Impact of a Drain Field Plate on the Breakdown Characteristics of AlInN/GaN MOSHEMT”, Journal of Korean Physical Society, vol. 67, no. 9, pp. 1592-1596, 2015. [IF: 0.4, SCI, JCR]. DOI: 10.3938/jkps.67.1592.
13. K. Jena, R. Swain, T.R. Lenka, “Impact of oxide thickness on gate capacitance-Modeling and Comparative Analysis of GaN based MOSHEMTs”, Pramana-Journal of Physics, vol. 85, no. 6, pp 1221–1232, 2015. [IF: 0.720, SCI, JCR]. DOI: 10.1007/s12043-015-0948-1.
14. R. Swain, J. panda, K. Jena and T. R. Lenka, “Modeling and Simulation of Oxide Dependent 2DEG Sheet Charge Density in AlGaN/GaN MOSHEMT”, Journal of Computational Electronics, vol. 14, no. 03, pp. 754-761, 2015. [IF: 1.520 SCIE, JCR]. DOI: 10.1007/s10825-015-0711-3.
15. R. Swain, K. Jena and T. R. Lenka, “Interface DOS Dependent Analytical Model Development for DC Characteristics of Normally-off AlN/GaN MOSHEMT”, Superlattices and Microstructures, vol. 84, pp. 54-65, 2015. [IF: 2.097, SCI, JCR]. DOI:10.1016/j.spmi.2015.04.025.

16. K. Jena, R. Swain, and T. R. Lenka, “Modeling and comparative analysis of DC characteristics of AlGaN/GaN HEMT and MOSHEMT devices”, Int. Journal of Numerical Modeling, vol. 29, no. 1, pp. 83-92, 2015. [IF: 0.629, SCI, JCR]. DOI: 10.1002/jnm.2048.
17. K. Jena, R. Swain, T.R. Lenka, “Impact of barrier thickness on gate capacitance—Modeling and Comparative analysis of GaN based MOSHEMTs”, Journal of Semiconductors, [IF: 0.32]. vol. 36, no. 3, pp.034003, 2015. DOI: 10.1088/1674-4926/36/3/ 034003.

Conference Publication
1. A. Chakrabarty, R. Swain, A. K. Panda, “Fin Width dependent Threshold Voltage Modeling in AlGaN/GaN Fin shaped nano channel HEMT”, IEEE CALCON, 2020, Kolkata.
2. A. Chakrabarty, R. Swain, “Surface Potential based modeling of Sheet Charge Density and Estimation of Critical Barrier Thickness in AlGaN/GaN HEMT”, IEEE INDICON, 2019, Rajkot.
3. R. Swain and T. R. Lenka, “Comparative study of critical barrier thickness for normally-off GaN-MOSHEMTs”, IWPSD, 07-10 Dec, 2015, Bangalore.
4. R. Swain and T. R. Lenka, “Investigation of Critical Barrier Thickness in Lattice Matched InAlN/GaN MOSHEMT towards Normally-off Operation”, IEEE TENCON, 01-04 Nov, 2015, Macau. (IEEE Xplore)
5. R. Swain, K. Jena, T. R. Lenka, G. N. Dash and A. K. Panda, “DC & RF Characteristics of normally-off AlN/GaN MOSHEMT by varying Oxide Thickness,” IEEE conference on Electron devices and Solid-State Circuits, Singapore, June 1-4, 2015. (IEEE Xplore)
6. R. Swain and T. R. Lenka, “Normally-off Al0.25Ga0.75N/GaN MOSHEMT with Stack Gate Dielectric Structure”, IEEE Conference on Electron devices and Solis-State Circuits, Singapore, June 1-4, 2015. (IEEE Xplore)
7. R. Swain and T. R. Lenka, “Role of Oxide Interface Charge for Shift in Threshold Voltage of AlN/GaN MOSHEMT with Different Gate Dielectrics,” International Symposium on Semiconductor Materials and Devices, Chennai, Feb 2-5, 2015.

8. J. Panda, R. Swain, G. S. Rao, and T. R. Lenka, “Realization of Improved Transconductance and capacitance Characteristics in Al0.3Ga0.7N/AlN/GaN HEMT”, IEEE International Conference: Electrical, Electronics, Signals, Communication & Optimization-EESCO, Jan 24-26, 2015. (IEEE Xplore)
9. R. Swain, K. Jena, A. Gaini, and T. R. Lenka, “Comparative Study of AlN/GaN HEMT and MOSHEMT Structures by Varying Oxide Thickness”, IEEE Nanotechnology Materials and Devices Conference, Aci Castello, Italy, Oct 12-15, 2014. (IEEE Xplore)

Modeling and Simulation of III-V compound semiconductor devices (normally-off HEMTs and MOSHEMTs)

Ph.D. Supervisor
1. Mr. Ashutosh Chakrabarty at BPUT on the topic “Modeling and Simulation of AlGaN/GaN E-mode MOS-FinHEMT for Power Electronic Applications”

1. DST Young Scientist Grant under International Travel Support (ITS) scheme to attend IEEE TENCON 2015 at Macau from 01-04 Nov 2015.
2. Fellowship to attend International Symposium on Semiconductor Materials and Devices 2015 at Anna University, Chennai
3. Reviewer of International Journal of Numerical Modelling: Electronic Networks, Devices, and Fields (Wiley Publications).
4. Reviewer of IEEE Open Journal of Power Electronics.
5. Reviewer of IEEE Journal of Emerging and Selected Topics in Power Electronics

1. Member, IEEE-EDS (Membership No. 92843511) since 2013.
2. Member, IFERP (Membership No. PMIN04619837) 2020.

1. Assistant Hostel Superintendent of Boys Hostel-2 in AY 2016-17
2. Officer-in-charge Training and Placement in AY 2017-19
3. Departmental coordinator for Internal examination in AY 2018-20
4. Superintendent of off-campus Boys Hostel from AY 2020 till date.

Department of ETC,

Parala Maharaja Engineering College,

Sitalapalli, Berhampur-761003